GaN and InGaN„112 2... surfaces: Group-III adlayers and indium incorporation
نویسنده
چکیده
First-principles calculations for clean and In-rich GaN 112 2 surfaces indicate that indium will, for the same indium chemical potential, incorporate in higher concentrations on the 112 2 surface than on the 101 0 surface. Because In atoms are larger than Ga atoms, there is a strain-induced repulsive interaction between incorporated In atoms on the surface. This interaction is weaker on the 112 2 surface in comparison to the 101 0 surface. © 2009 American Institute of Physics. doi:10.1063/1.3240401
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